Product type: N-Type Semiconductor. Application: GaN Epitaxial Wafers. Model: 2 inch & 4 inch.
Overview
Cplane Pss Patterned Sapphire Substrate Wafer (2 inch & 4 inch): a sapphire / specialty wafer made from Compound Semiconductor. Listed geometry: diameter 2.6 ± 0.15 μm; Spacing: 0.4 ± 0.15 μm; Depth: 1.6 ± 0.15 μm, size 2 Inch, thickness 430um, round wafers shape. It is used in GaN Epitaxial Wafers. Dimensions, material grade, coating and finish can be quoted to your drawing; the values above are the listed starting point.
Specifications
| Material | Compound Semiconductor |
|---|---|
| Type | N-Type Semiconductor |
| Shape | Round Wafers |
| Diameter | 2.6 ± 0.15 μm; Spacing: 0.4 ± 0.15 μm; Depth: 1.6 ± 0.15 μm |
| Size | 2 Inch |
| Thickness | 430um |
| Application | GaN Epitaxial Wafers |
| Manufacturing Technology | CMP |
| Model NO. | 2 inch & 4 inch |
| Materials Quality | 99.996% Monocrystalline |
| Orientation | Cplane |
| Surface Treatment | Epi-Ready |
| Note | The sapphire substrate can be provided according to your specific requirements. |
| Related products | 1. 2inch, 3inch, 4inch & 6inch C plane sapphire substrates |
| Manufacture | Crystal rolling |
| Supplier | Jiaozuo Commercial Finewin Co., Ltd. |
Technical data
| Crystal materials | 99, 996% of Al2O3, High Purity, Monocrystalline |
|---|---|
| Crystal quality | Block marks, twins, Color, micro-bubbles and dispersal centers are non-existent |
| Diameter | 2inch,4 inch |
| Thickness | 430±15 μm |
| Orientation | C-plane off M-plane |
| Primary flat Orientation | A-plane (1 1-2 0) ± 0.2° |
| Patterned Specification | Diameter: 2.6 ± 0.15 μm; Spacing: 0.4 ± 0.15 μm; Depth: 1.6 ± 0.15 μm |
| TTV | ≤ 10 μm, |
| LTV | ≤ 10 μm |
| BOW | ≤ 10 μm |
| Warp | ≤ 10 μm |
| Front Surface Back Surface | Epi-READY POLISHED Fine ground (Ra=0.5 to 1.2 μ M) or Epi-polished (Ra< 0.2 nm) |
| Cleaning/packaging | Class 100 clean room cleaning, vacuum packaging; 25 pieces in one cassette packaging or individual packaging |
What to specify when you request a quote
- Diameter and flat / notch — listed as “2.6 ± 0.15 μm; Spacing: 0.4 ± 0.15 μm; Depth: 1.6 ± 0.15 μm”; state diameter, flat or notch and their tolerances.
- Thickness and TTV — listed as “430um”; give thickness, its tolerance and total thickness variation.
- Polish and roughness — listed as “Epi-Ready”; specify single- or double-side polish and roughness.
- Flatness, bow and warp — quote flatness, bow and warp limits.
- Material grade — listed as “Compound Semiconductor”; name the grade (JGS1/JGS2, Borofloat 33, alkali-free, sapphire orientation).
Engineering guides for this part
For material grades and coating options, see Fused Quartz Wafer Substrate Selection: Materials & Coatings for Semiconductor and Optical Systems. How parts like this are machined and finished is covered in Precision Glass Hole Machining for MEMS and Wafer Parts.
