
Edge Grinding Quartz Glass Wafers
Edge Grinding Quartz Glass Wafers: Quartz Glass, CTE 0.59 x 10^-6 /K; chamfer +/-0.05 mm. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Edge Grinding Quartz Glass Wafers: Quartz Glass, CTE 0.59 x 10^-6 /K; chamfer +/-0.05 mm. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Edge Grinding Fused Silica Wafers: Fused Silica, CTE 0.55 x 10^-6 /K; chamfer +/-0.05 mm. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Edge Grinding Borofloat 33 Wafers: Borofloat 33, CTE 3.25 x 10^-6 /K; chamfer +/-0.05 mm. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Drilling Quartz Glass Wafers: Quartz Glass, CTE 0.59 x 10^-6 /K; +/-0.02 mm hole position. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Drilling Fused Silica Wafers: Fused Silica, CTE 0.55 x 10^-6 /K; +/-0.02 mm hole position. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Drilling Borofloat 33 Wafers: Borofloat 33, CTE 3.25 x 10^-6 /K; +/-0.02 mm hole position. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Laser Cutting Borofloat 33 Wafers: Borofloat 33, CTE 3.25 x 10^-6 /K; +/-0.02 mm contour. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Laser Cutting Quartz Glass Wafers: Quartz Glass, CTE 0.59 x 10^-6 /K; +/-0.02 mm contour. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Laser Cutting Fused Silica Wafers: Fused Silica, CTE 0.55 x 10^-6 /K; +/-0.02 mm contour. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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Dicing Quartz Glass Wafers: Quartz Glass, CTE 0.59 x 10^-6 /K; +/-0.01 mm index accuracy. No MOQ, prototypes in 5-10 days, DFM review with every RFQ.
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